08/16/2024, 06:28 AM UTC
应力模型介绍与仿真Introduction and Simulation of Stress Models
➀ 半导体器件仿真中的应力模型考虑机械应力对材料电子性质的影响。➁ 应力通过改变能带结构、有效质量和载流子迁移率显著影响器件性能。➂ 在Sdevice中，应力模型使用变形势理论和k·p方法模拟这些效应，考虑能带边缘位移和曲率变化。➃ 应力还影响散射机制，这些变化反映在迁移率模型中。➄ NMOS和PMOS器件通过嵌入材料诱导应力，增强载流子迁移率和器件性能。➀ Stress models in semiconductor device simulation account for mechanical stress effects on material electronic properties. ➁ Stress influences device performance by altering band structures, effective masses, and carrier mobilities. ➂ In Sdevice, stress models use deformation potential theory and k·p method to simulate these effects, considering band edge shifts and curvature changes. ➃ Stress also affects scattering mechanisms, which are reflected in the mobility models. ➄ NMOS and PMOS devices use embedded materials to induce stress, enhancing carrier mobilities and device performance.
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本文由大语言模型（LLM）生成，旨在为读者提供半导体新闻内容的知识扩展（Beta）。
