01/09/2025, 12:28 PM UTC
拓扑半金属实现高性能纳米级互连Topological Semimetal Enables High-Performance Nanoscale Interconnects
➀ 斯坦福大学的研究人员发现，几原子厚的铌磷化物薄膜比铜导电性更强。这是由于材料独特的表面导电特性，即使在薄膜厚度减小时也能增强其导电性。➁ 这些薄膜可以在与现代芯片制造工艺兼容的温度下制造，可能有助于开发更强大、更节能的电子产品。➂ 这项研究可能为探索其他拓扑半金属作为未来电子产品的潜在导体铺平道路。➀ Researchers at Stanford University have demonstrated that niobium phosphide films, just a few atoms thick, can conduct electricity more efficiently than copper. This is due to the material's unique surface conduction properties, which enhance its conductivity even as the film thickness decreases. ➁ The films can be fabricated at temperatures compatible with modern chip manufacturing processes, potentially leading to more powerful and energy-efficient electronics. ➂ The research could pave the way for exploring other topological semimetals as potential conductors in future electronics.---
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