03/31/2025, 10:02 AM UTC
威尔士斯旺西大学启动4英寸氧化镓生产线用于电力研究Swansea University starts 4inch gallium oxide line for power research
威尔士的斯旺西大学在其集成半导体材料中心（CISM）安装了氧化镓（Ga2O3）沉积设备。这种材料是一种超宽禁带半导体，适用于高压应用。该大学在其MOCVD实验室中添加了一个紧密耦合的淋浴头沉积系统，以在4英寸基板上生长晶体氧化镓薄膜。这个新设施预计将增强研究能力和合作机会。
Swansea University in Wales has installed gallium tri-oxide (Ga2O3) deposition equipment at its Centre for Integrated Semiconductor Materials (CISM). The material is an ultra-wide bandgap semiconductor suitable for high voltage applications. The university has added a close-coupled shower head deposition system to its MOCVD laboratory to grow crystalline gallium oxide thin films on 4 inch substrates. This new facility is expected to enhance research capabilities and collaboration opportunities.
---
本文由大语言模型（LLM） 生成，旨在为读者提供半导体新闻内容的知识扩展（Beta）。
