06/26/2025, 08:27 AM UTC
为功率电子和紫外光子学的未来市场提供4英寸氮化铝晶体Provision of 4-inch Aluminum Nitride Crystals for Future Markets in Power Electronics and UV Photonics
➀ 德国莱布尼兹晶体生长研究所（IKZ）、PVA TePla AG与Siltronic AG合作，将氮化铝（AlN）晶体生长技术从2英寸晶圆扩展至4英寸，推动工业化应用；
➁ AlN的超宽禁带特性可支持高效功率电子（如电动汽车、可再生能源）与紫外光子学（如消毒、医疗/农业传感）；
➂ 项目整合三方优势——IKZ的晶体生长技术、Siltronic的衬底开发能力及PVA TePla的PVT设备规模化经验，以增强欧洲在半导体材料领域的自主性。
➀ Three leading semiconductor entities—Leibniz-Institut für Kristallzüchtung (IKZ), PVA TePla AG, and Siltronic AG—collaborate to scale aluminum nitride (AlN) crystal growth from 2-inch to 4-inch wafers, targeting industrial applications;
➁ AlN's ultra-wide bandgap properties enable high-efficiency power electronics (e.g., electric mobility, renewable energy) and UV photonics (e.g., disinfection, medical/agricultural sensors);
➂ Partners aim to strengthen Europe's semiconductor sovereignty by combining expertise in crystal growth (IKZ), substrate development (Siltronic), and PVT-based industrial scaling (PVA TePla).
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