06/11/2025, 02:34 PM UTC
非破坏性成像技术揭示纳米电子器件的结构秘密Non-Destructive Imaging Uncovers Structural Secrets of Nanoelectronic Devices
➀ 利用12纳米X射线束的非破坏性成像技术，分析了全环绕栅极晶体管（GAAFET）中纳米片的结构变形；
➁ 发现两种变形机制：长程（晶格失配和边缘松弛）与短程（与纳米片分层结构相关）；
➂ IBM与布鲁克黑文国家实验室的同步辐射光源NSLS-II合作，为提升纳米电子器件可靠性和性能预测提供新方向。
➀ A non-destructive X-ray imaging method with a 12-nm beam analyzed structural deformations in nanosheets used in Gate-All-Around Field Effect Transistors (GAAFETs);
➁ Two deformation mechanisms were identified: long-range (lattice mismatch and edge relaxation) and short-range (linked to nanosheet layering);
➂ IBM and Brookhaven's NSLS-II collaboration provides insights to enhance reliability and performance prediction for nanoscale electronics.
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