Samsung's 10th Generation V-NAND: Preparing for PCIe 5.0 and 6.0 SSDs
12/03/2024, 12:55 PM UTC
三星准备发布第10代V-NAND，拥有400+层，为未来PCIe 5.0和6.0 SSD提供动力Samsung prepares to unveil 10th generation V-NAND with 400+ layers — ready to power future PCIe 5.0 and 6.0 SSDs
➀ 三星即将发布拥有超过400层的第10代V-NAND；➁ 新的3D NAND将支持PCIe 5.0和可能的PCIe 6.0 SSD；➂ 1Tb 3D TLC NAND的存储密度为28 Gb/mm²，略低于目前世界上最密集的非易失性存储器。➀ Samsung is preparing to unveil its 10th generation V-NAND with over 400 layers; ➁ The new 3D NAND will support PCIe 5.0 and potentially PCIe 6.0 SSDs; ➂ The 1Tb 3D TLC NAND has a storage density of 28 Gb/mm², slightly lower than the current world's densest non-volatile memory.Samsung is preparing to unveil its 10th generation V-NAND, a flash memory technology that promises to power the next generation of SSDs. This new V-NAND will have over 400 layers and is designed to support both PCIe 5.0 and potentially PCIe 6.0 SSDs.
With a storage density of 28 Gb/mm², the 1Tb 3D TLC NAND is slightly lower than Samsung's current world-leading 1Tb 3D QLC V-NAND, which has a density of 28.5 Gb/mm². Despite this, the new V-NAND is expected to offer significant improvements in performance and storage capacity.
One of the key features of this new V-NAND is its interface speed of 5.6 GT/s, which is much faster than the 3.6 GT/s offered by YMC's Xtacking architecture-based memory. This speed is crucial for achieving high throughput in PCIe 5.0 and PCIe 6.0 interfaces.
Samsung plans to unveil the new V-NAND at the upcoming International Solid-State Circuits Conference (ISSCC). While it is not clear when the new memory will be integrated into Samsung's own SSDs, it is reasonable to expect volume production to begin in 2025.
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