04/23/2025, 01:16 PM UTC
Littelfuse推出200V半桥MOSFET和IGBT驱动器200V half-bridge mosfet driver
➀ 普利富斯公司推出了具有集成交叉导通保护逻辑的200V半桥MOSFET和IGBT驱动器。
➁ IXD2012NTR旨在驱动需要10至20V的n沟道MOSFET栅极，并能提供至少1.4A的上拉和1.8A的下拉（均针对短路）。
➂ 该设备针对高频功率应用进行了优化，供电范围在10至20V之间，高侧自举电路可处理高达224V，以适应全200V输出端电路电压。
➀ Littelfuse has introduced a 200V half-bridge MOSFET and IGBT driver with integrated cross-conduction protection logic.
➁ The IXD2012NTR is designed to drive n-channel MOSFET gates requiring 10 to 20V and can supply a minimum of 1.4A pull-up and 1.8A pull-down.
➂ The device is optimized for high-frequency power applications and offers a supply range of 10 to 20V with a high-side bootstrap circuit capable of handling up to 224V.
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