<p>The IHP - Leibniz-Institut für innovative Mikroelektronik has been closely collaborating with the University of Nagoya, Japan, for many years. The partnership involves research collaboration in the fields of Silicon-Germanium Epitaxy (SiGe), Nanotechnology, and advanced semiconductor and optoelectronic devices.</p><p>The partners are developing new epitaxy techniques and methods to optimize semiconductor interfaces, enabling the miniaturization of electronic devices. One key element is the investigation of SiGe epitaxy processes using the IHP technology platform. The properties of Silicon-Germanium nanowires and nanoparticles are being studied for use in energy-efficient transistors and lasers on silicon. Other research topics include the luminescence properties of Si and Ge nanostructures and innovative solutions for sub-10nm technologies.</p><p>Prof. Dr. Andreas Mai, Head of the Technology Department at IHP, says, 'We are very excited about this collaboration as it allows us to benefit from the unique resources and experiences of both parties. The future of microelectronics and silicon photonics is being advanced through such international partnerships.' Dr. Yuji Yamamoto, Project Leader at IHP, adds, 'Our research on SiGe nanostructure epitaxy enables the development of energy-efficient transistors and light sources that can revolutionize quantum electronics and optoelectronics.'</p>