04/15/2025, 01:57 PM UTC
德国IHP与日本名古屋大学共同研发下一代半导体技术IHP and the University of Nagoya, Japan, Collaboratively Develop Next-Generation Semiconductor Technologies
德国IHP创新微电子研究所与日本名古屋大学已合作多年。该伙伴关系包括在硅锗外延（SiGe）、纳米技术以及先进的半导体和光电子器件领域的科研合作。
合作伙伴正在开发新的外延技术和方法，以优化半导体接口，从而实现电子设备的微型化。关键要素之一是使用IHP技术平台研究SiGe外延工艺。正在研究硅锗纳米线和纳米粒子的特性，用于高效能晶体管和硅基激光器。其他研究课题包括Si和Ge纳米结构的发光特性以及针对亚10纳米技术的创新解决方案。
IHP技术部门负责人安德烈亚斯·迈教授表示：“我们对这次合作感到非常兴奋，因为它使我们能够从双方的独特资源和经验中受益。微电子和硅光电子的未来正通过这样的国际伙伴关系得到推进。” IHP项目负责人山本由纪博士补充说：“我们对SiGe纳米结构外延的研究使开发 高效能晶体管和光源成为可能，这些晶体管和光源可以革新量子电子学和光电子学。”
The IHP - Leibniz-Institut für innovative Mikroelektronik has been closely collaborating with the University of Nagoya, Japan, for many years. The partnership involves research collaboration in the fields of Silicon-Germanium Epitaxy (SiGe), Nanotechnology, and advanced semiconductor and optoelectronic devices.
The partners are developing new epitaxy techniques and methods to optimize semiconductor interfaces, enabling the miniaturization of electronic devices. One key element is the investigation of SiGe epitaxy processes using the IHP technology platform. The properties of Silicon-Germanium nanowires and nanoparticles are being studied for use in energy-efficient transistors and lasers on silicon. Other research topics include the luminescence properties of Si and Ge nanostructures and innovative solutions for sub-10nm technologies.
Prof. Dr. Andreas Mai, Head of the Technology Department at IHP, says, 'We are very excited about this collaboration as it allows us to benefit from the unique resources and experiences of both parties. The future of microelectronics and silicon photonics is being advanced through such international partnerships.' Dr. Yuji Yamamoto, Project Leader at IHP, adds, 'Our research on SiGe nanostructure epitaxy enables the development of energy-efficient transistors and light sources that can revolutionize quantum electronics and optoelectronics.'
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