06/11/2025, 05:20 AM UTC
美光开始对其HBM4进行样品测试Micron sampling HBM4
➀ 美光基于1ß DRAM工艺和12层堆叠封装技术的HBM4进入样品测试阶段，计划2026年量产；
➁ HBM4每堆栈带宽超2.0 TB/s，性能较HBM3E提升60%，能效提高20%；
➂ SK海力士计划2025年下半年在3nm节点量产HBM4，三星则开发4nm工艺HBM4，两者均与台积电合作生产基版和采用CoWoS封装。
➀ Micron is sampling HBM4 memory stacks based on its 1ß DRAM process and 12-high packaging, aiming for volume production in 2026;
➁ The HBM4 offers 2.0 TB/s bandwidth per stack, 60% faster performance than HBM3E, and 20% improved power efficiency;
➂ SK Hynix plans HBM4 mass production on 3nm in H2 2025, while Samsung develops 4nm-based HBM4, both collaborating with TSMC for base dies and COWOS packaging.
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