GlobalWafers has officially entered into an agreement with the U.S. government, under which the U.S. government will allocate $406 million to fund the establishment of a 300mm wafer production facility in the United States. This significant investment is part of the broader CHIPS Act initiative, aimed at strengthening the domestic microelectronics industry.

GlobalWafers plans to invest a total of $4 billion in its facilities in Missouri and Texas. The Texas facility will be the first domestic high-volume 300mm silicon wafer production facility, catering to advanced process technologies used in cutting-edge processors and memory. Additionally, a portion of the Texas site will be dedicated to producing 150mm and 200mm silicon carbide (SiC) wafers, crucial for high-voltage applications such as electric vehicles and clean energy systems.

In Missouri, GlobalWafers will focus on producing 300mm silicon-on-insulator (SOI) wafers, widely used in aerospace, defense, and low-power chip applications. Notably, the U.S. currently lacks a chipmaker that processes SOI wafers in high volumes.

This initiative is not only about expanding production capacity but also about mitigating supply risks associated with the current dominance of Asian silicon wafer production. The project is expected to create approximately 2,580 jobs, including 1,700 construction roles and 880 manufacturing positions, significantly contributing to local economies in both states.

U.S. Secretary of Commerce Gina Raimondo emphasized the strategic importance of this investment, stating that the produced wafers are foundational for advanced chips that will enable the U.S. to innovate and compete globally. The investment is also part of efforts to strengthen supply chains and protect national and economic security.