11/17/2024, 11:09 AM UTC
三星电子D1b DRAM分析：尖端技术和单元格尺寸Samsung Electronics D1b DRAM Analysis: Cutting-Edge Technology and Cell Size
<p>➀ 科技洞察已经获取并分析了三星电子的D1b DRAM，揭示了其单元格尺寸和比特密度。</p><p>➁ 三星的D1b DRAM的单元格尺寸比SK海力士和美光科技的D1b版本小得多，其字线和位线间距分别为32.6nm和37.6nm。</p><p>➂ 7.8F^2 DRAM单元格的设计规则或特征尺寸为12.54nm，表明三星的D1b DRAM属于12nm中端类别。</p><p>➀ TechInsights has obtained and analyzed Samsung Electronics' D1b DRAM, revealing its cell size and bit density.</p><p>➁ Samsung's D1b DRAM has a cell size significantly smaller than SK Hynix and Micron's D1b versions, with a wordline and bitline pitch of 32.6nm and 37.6nm respectively.</p><p>➂ The cell design rule or feature size for the 7.8F^2 DRAM cell is 12.54nm, indicating that Samsung's D1b DRAM is in the 12nm mid-range class.</p>
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