12/02/2024, 03:09 PM UTC
通过应变工程提升二维晶体管Improving 2D Transistors With Strain Engineering
➀ 斯坦福研究人员通过使用氮化硅层施加应变，开发了一种改进MoS2晶体管的新方法；➁ 该技术利用氮化硅帽层对单层二硫化钼（MoS2）晶体管施加应变；➂ 这项研究可能为未来开发更小、性能更高的二维半导体晶体管铺平道路。➀ Stanford researchers have developed a new method to improve MoS2 transistors by adding strain using silicon nitride layers; ➁ This technique utilizes silicon nitride capping layers to apply strain to monolayer molybdenum disulfide (MoS2) transistors; ➂ The research could pave the way for future development of smaller, higher-performing 2D semiconductor-based transistors.
---
本文由大语言模型（LLM）生成，旨在为读者提供半导体新闻内容的知识扩展（Beta）。
