08/27/2024, 03:38 PM UTC
基于高内聚能金属栅电极的二维材料晶体管Two-Dimensional Materials-Based Transistors with High Cohesive Energy Metal Gate Electrodes
➀ 研究探讨了Ti和Pt电极在HfO2基电阻随机存取存储器电阻开关变化中的作用。➁ 研究了金属氧化物忆阻开关的电成型机制 。➂ 探讨了HfO2基门堆栈击穿中氧空位的影响。➃ 直接观察了NiO/Pt薄膜中电阻开关期间的氧运动。➄ 论文讨论了使用分层二维材料开发电子突触的发展。➀ The study explores the role of Ti and Pt electrodes in resistance switching variability of HfO2-based resistive random access memory. ➁ It investigates the mechanism of electroforming in metal oxide memristive switches. ➂ The research examines the impact of oxygen vacancies in HfO2-based gate stack breakdown. ➃ It also looks into the direct observation of oxygen movement during resistance switching in NiO/Pt film. ➄ The paper discusses the development of electronic synapses using layered two-dimensional materials.
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