05/08/2025, 06:09 AM UTC
钙钛矿半导体助力未来电路发展Perovskite Semiconductors Boost Future Circuits
➀ 浦项科技大学开发出基于钙钛矿材料的p型半导体，采用热蒸发沉积技术实现空穴迁移率超30 cm²/V·s，性能媲美商用n型器件；
➁ 该工艺提升器件稳定性并支持大面积阵列制造，兼容现有OLED生产线，显著降低生产成本；
➂ 低温加工特性（<300°C）为超薄柔性显示屏、可穿戴设备及三维集成电路带来新的商业化可能。
➀ POSTECH researchers developed a vapor-deposited tin-based perovskite semiconductor achieving p-type transistor performance comparable to commercial n-type devices;
➁ The thermal evaporation method enhances device stability and enables large-area arrays, compatible with existing OLED manufacturing processes;
➂ This breakthrough paves the way for ultra-thin flexible displays and low-power wearable electronics with processing temperatures below 300°C.
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