11/22/2024, 02:28 PM UTC
希悦士推出321层NANDHynix launches 321-layer NAND
➀ 希悦士开始大规模生产全球首款321层NAND，容量达1Tb；➁ 与238层设备相比，321层设备在写入时间上提升了12%，读取时间提升了13%；➂ 希悦士采用了‘三插’工艺技术和低应力材料，成功实现了超过300层的堆叠。➀ Hynix has started mass production of the world's first 321-layer NAND with 1Tb capacity; ➁ The 321-layer device offers a 12% improvement in write time and a 13% improvement in read time compared to the 238-layer device; ➂ Hynix has adopted the '3 plugs' process technology and a low-stress material for stacking more than 300 layers.
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