09/03/2024, 10:20 PM UTC
破关键技术！沟槽型SiC MOSFET芯片Breakthrough in Key Technology: Trench-Type SiC MOSFET Chips
➀ 国家第三代半导体技术创新中心（南京）成功研发沟槽型SiC MOSFET芯片，突破了平面型SiC MOSFET芯片的技术瓶颈。➁ 与平面型相比，这些新芯片的导通性能提高了约30%。➂ 沟槽型SiC MOSFET芯片预计将在一年内应用于新能源汽车电驱动、智能电网和光伏储能等领域，有望提升电动汽车续航能力约5%，并降低芯片成本。➀ The National Third-Generation Semiconductor Technology Innovation Center (Nanjing) has successfully developed trench-type SiC MOSFET chips, breaking through the technical barriers of planar SiC MOSFET chips. ➁ These new chips offer a 30% improvement in conduction performance compared to planar types. ➂ The trench-type SiC MOSFET chips are expected to be applied in areas such as new energy vehicle electric drives, smart grids, and photovoltaic energy storage within a year, potentially increasing the range of electric vehicles by about 5% and reducing chip costs.
---
本文由大语言模型（LLM）生成，旨在为读者提供半导体新闻内容的知识扩展（Beta）。
