02/27/2025, 09:25 AM UTC
薄芯片与坚固衬底——高效碳化硅功率电子的关键技术Thin Chips and Robust Substrates - Key Technologies for Cost-Efficient Silicon Carbide Power Electronics
➀ 碳化硅（SiC）为功率电子提供了显著的技术优势，但其成本仍是市场渗透的障碍。弗劳恩霍夫研究所正在开发关键技术，以减少材料损失和器件厚度，同时提高碳化硅芯片的热机械稳定性。
➁ ThinSiCPower项目旨在通过更高效的加工技术，如激光分离碳化硅晶体并将其粘接到载体衬底上，来生产成本效益高的碳化硅衬底和更薄的碳化硅芯片。
➂ 项目合作伙伴包括弗劳恩霍夫ISE、ENAS、IWM和IISB，目标是通过提高负载循环稳定性，将碳化硅器件成本降低25%，将碳化硅设计成本降低25%。
➀ Silicon carbide (SiC) offers significant technical advantages for power electronics, but its cost remains a barrier to market penetration. The Fraunhofer Institutes are developing key technologies to reduce material losses and device thickness while increasing the thermomechanical stability of SiC chips.
➁ The ThinSiCPower project aims to produce cost-effective SiC substrates and thinner SiC chips using more resource-efficient processing technologies, such as laser separation of SiC crystals and bonding onto a carrier substrate.
➂ The project partners are Fraunhofer ISE, ENAS, IWM, and IISB, with the goal of reducing SiC device costs by 25% and SiC design costs by 25% through increased load cycle stability.
---
本文由大语言模型（LLM）生成，旨在为读者提供半导体新闻内容的知识扩展（Beta）。
