SemiVoice

electronicsforu

08/27/2024, 02:22 PM UTC

二维、低功耗场效应晶体管的新突破Two-Dimensional, Energy-Efficient Field-Effect Transistor

➀ 一支工程师团队开发了一种新的二维、低功耗场效应晶体管，克服了芯片设计中的关键障碍。➁ 这项创新专注于解决高栅极泄漏和低介电强度问题，这对小型化至关重要。➂ 使用单晶氧化铝作为介质标志着晶体管技术的一大进步。➀ A team of engineers has developed a new two-dimensional, low-power field-effect transistor, overcoming key barriers in chip design. ➁ The innovation focuses on resolving high gate leakage and low dielectric strength issues, critical for miniaturization. ➂ The use of single-crystalline aluminum oxide as a dielectric marks a significant advancement in transistor technology.

---

本文由大语言模型（LLM）生成，旨在为读者提供半导体新闻内容的知识扩展（Beta）。