12/24/2024, 11:46 AM UTC
超低泄漏低功耗DRAM技术Low-Power DRAM Technology For Ultra-Low Leakage
➀ 柯西雅和南亚科技共同研发了一种名为OCTRAM的低功耗DRAM技术，采用氧化物半导体晶体管实现超低泄漏和高效率，旨在显著降低AI、5G后通信和物联网设备中的功耗。 ➁ OCTRAM采用圆柱形InGaZnO垂直晶体管作为其单元晶体管，提供更高的内存密度。 ➂ 该技术实现了每个单元15μA以上的高'开启'电流和1aA以下的低'关闭'电流，将能量泄漏降低到几乎可以忽略不计的水平。➀ Kioxia Corporation and Nanya Technology have developed a low-power DRAM technology called OCTRAM, which uses oxide-semiconductor transistors for ultra-low leakage and high efficiency. The technology aims to significantly reduce power consumption in AI, post-5G communication, and IoT devices. ➁ The OCTRAM features a cylindrical-shaped InGaZnO vertical transistor as its cell transistor, offering enhanced memory density. ➂ The technology achieves a high 'on' current exceeding 15μA per cell and an 'off' current as low as 1aA per cell, reducing energy leakage to negligible levels.---
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