01/09/2025, 09:01 AM UTC
瑞萨开发新型MOSFeT工艺Renesas develops new MOSFET process
➀ 瑞萨推出了100V高压N通道MOSFET，具有行业领先的电流开关性能；➁ 新的REXFET-1工艺将导通电阻降低了30%，Qg特性降低了10%；➂ 这些MOSFET采用标准封装，并附带参考设计，方便客户使用。➀ Renesas has introduced 100V high-power N-Channel MOSFETs with industry-leading high-current switching performance; ➁ The new REXFET-1 process reduces on-resistance by 30 percent and Qg characteristics by 10 percent; ➂ The MOSFETs are available in standard packages and come with a reference design for customer convenience.---
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